Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures

被引：260

作者：

Ahn, CH

Tybell, T

Antognazza, L

Char, K

Hammond, RH

Beasley, MR

Fischer, O

Triscone, JM

机构：

[1] CONDUCTUS INC,SUNNYVALE,CA 94086

[2] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

来源：

SCIENCE | 1997年 / 276卷 / 5315期

关键词：

D O I：

10.1126/science.276.5315.1100

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A scanning probe microscope was used to induce local, nonvolatile field effects in epitaxial, ferroelectric Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures. Field-effected regions with linewidths as small as 3500 angstroms were written by locally switching the polarization field of the Pb(Zr0.52Ti0.48)O-3 layer; the electronic density of the underlying metallic SrRuO3 layer was modified and the sheet resistance was changed by up to 300 ohms per square. This procedure is completely reversible and allows submicrometer electronic features to be written directly in two dimensions, with no external electrical contacts or lithographic steps required.

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页码：1100 / 1103

页数：4

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