Observation of the apparent metal-insulator transition of high-mobility two-dimensional electron system in a Si/Si1-xGex heterostructure

被引：11

作者：

Lai, K ^{[1
]}

Pan, W

Tsui, DC

Xie, YH

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.1639507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistors are fabricated from the Si/Si1-xGex heterostructures. The density of the two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.13x10(11) to 4.24x10(11) cm(-2). The temperature dependence of the resistivity of the 2DES was measured and the apparent metal-insulator transition was observed. Its main features are similar to those reported in other semiconductor-based two-dimensional systems. (C) 2004 American Institute of Physics.

引用

页码：302 / 304

页数：3

共 14 条

[1] Colloquium:: Metallic behavior and related phenomena in two dimensions [J].

Abrahams, E ;

Kravchenko, SV ;

Sarachik, MP .

REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :251-266

[2] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].

ABRAHAMS, E ;

ANDERSON, PW ;

LICCIARDELLO, DC ;

RAMAKRISHNAN, TV .

PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676

[3] Metal-insulator transition in 2D: resistance in the critical region [J].

Altshuler, BL ;

Maslov, DL ;

Pudalov, VM .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (02) :209-225

[4] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[5] Metal-insulator transition at B=0 in p-type SiGe [J].

Coleridge, PT ;

Williams, RL ;

Feng, Y ;

Zawadzki, P .

PHYSICAL REVIEW B, 1997, 56 (20) :12764-12767

[6] Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers [J].

Das Sarma, S ;

Hwang, EH .

PHYSICAL REVIEW LETTERS, 1999, 83 (01) :164-167

[7] GATED HALL-EFFECT MEASUREMENTS IN HIGH-MOBILITY N-TYPE SI/SIGE MODULATION-DOPED HETEROSTRUCTURES [J].

ISMAIL, K ;

ARAFA, M ;

STERN, F ;

CHU, JO ;

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1995, 66 (07) :842-844

[8] POSSIBLE METAL-INSULATOR-TRANSITION AT B=0 IN 2 DIMENSIONS [J].

KRAVCHENKO, SV ;

KRAVCHENKO, GV ;

FURNEAUX, JE ;

PUDALOV, VM ;

DIORIO, M .

PHYSICAL REVIEW B, 1994, 50 (11) :8039-8042

[9] Resistivity of dilute 2D electrons in an undoped GaAs heterostructure [J].

Lilly, MP ;

Reno, JL ;

Simmons, JA ;

Spielman, IB ;

Eisenstein, JP ;

Pfeiffer, LN ;

West, KW ;

Hwang, EH ;

Das Sarma, S .

PHYSICAL REVIEW LETTERS, 2003, 90 (05) :4-056806

[10] Nonmonotonic temperature-dependent resistance in low density 2D hole gases [J].

Mills, AP ;

Ramirez, AP ;

Pfeiffer, LN ;

West, KW .

PHYSICAL REVIEW LETTERS, 1999, 83 (14) :2805-2808

← 1 2 →