Dynamic low-temperature scanning force microscopy on nickel oxide (001)

被引：25

作者：

Allers, W. ^{[1
]}

Langkat, S.

Wiesendanger, R.

机构：

[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 72卷 / Suppl 1期

关键词：

PACS: 61.16.Ch; 68.35.Bs;

D O I：

10.1007/s003390100731

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present atomically resolved images of nickel oxide (001) obtained with low temperature non-contact atomic force microscopy. Using iron coated silicon cantilevers, it is possible to distinguish defects with a vertical resolution of less than 10 pm and to obtain atomic resolution across step edges on the upper and lower terrace within 1 nm of the edge. The noise level in these images could be reduced to approximate to 1.5 pm.

引用

页码：S27 / S30

页数：4

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