Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing

被引：100

作者：

Duraisamy, Navaneethan ^{[1
]}

Muhammad, Nauman Malik ^{[1
]}

Kim, Hyung-Chan ^{[2
]}

Jo, Jeong-Dai ^{[3
]}

Choi, Kyung-Hyun ^{[1
]}

机构：

[1] Jeju Natl Univ, Sch Mechatron Engn, Cheju, South Korea

[2] Jeju Natl Univ, Sch Elect Engn, Cheju, South Korea

[3] Korea Inst Machinery & Mat, Taejon, South Korea

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 15期

基金：

新加坡国家研究基金会;

关键词：

Electrohydrodynamic atomization; Electrode patterning; Titanium oxide; Thin films; Memristors; JET; OXIDE; MECHANISMS; RESISTANCE; LIQUIDS;

D O I：

10.1016/j.tsf.2012.03.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we are reporting the fabrication of memristor device (Ag/TiO2/Cu) using electrohydrodynamic inkjet printing technology. The titanium oxide (TiO2) active layer was deposited using electrohydrodynamic atomization technique. The metal electrodes were patterned by using electrohydrodynamic printing technique. The crystalline nature, surface morphology and optical properties of as deposited TiO2 films were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-visible spectroscopic analysis respectively. XRD and SEM studies revealed that the presence of anatase TiO2 with uniform deposition. The optical transmittance of the deposited TiO2 films was observed to be 87% in the visible region. The fabricated memristor device (Ag/TiO2/Cu) exhibits bipolar resistive switching behavior within the low operating voltage (+/- 0.7 V). Our results ensure that the printed technology provides breakthrough solution in the electronic memory device fabrication. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：5070 / 5074

页数：5

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