Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

被引：433

作者：

Chang, Wen-Yuan ^{[1
]}

Lai, Yen-Chao ^{[1
]}

Wu, Tai-Bor ^{[1
]}

Wang, Sea-Fue ^{[2
]}

Chen, Frederick ^{[3
]}

Tsai, Ming-Jinn ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Taipei Univ Technol, Dept Mat & Mineral Resources Engn, Taipei 106, Taiwan

[3] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

关键词：

14;

D O I：

10.1063/1.2834852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly (002)-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature. The Pt/ZnO/Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage. Only a low forming electric field was required to induce the resistive switching characteristics. The resistance ratios of high resistance state to low resistance state were in the range of 3-4 orders of magnitude within 100 cycles of test. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Poole-Frenkel emission, respectively. (c) 2008 American Institute of Physics.

引用

页数：3

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