Electric-pulse-induced reversible resistance in doped zinc oxide thin films

被引：69

作者：

Villafuerte, M.

Heluani, S. P.

Juarez, G.

Simonelli, G.

Braunstein, G. ^{[1
]}

Duhalde, S.

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Univ Nacl Tucuman, Dept Fis, Fac Ciencias Exactas & Tecnol, Lab Fis Solido, RA-4002 San Miguel De Tucuman, Argentina

[3] Univ Buenos Aires, Fac Ingn, Lab Ablac Laser, RA-1063 Buenos Aires, DF, Argentina

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2437688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonvolatile, electric-pulse-induced resistance switching is reported on S and Co doped ZnO thin films deposited on different substrates using magnetron sputtering and laser ablation. Two resistance states were obtained by applying voltage pulses of different polarity. The switching was observed regardless of the substrate, dopant species, or microstructure of the samples. In the Co doped ZnO samples, the two resistance states are remarkably stable and uniform.

引用

收藏

页数：3

相关论文

共 23 条

[1] SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].

ARGALL, F .

SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&

[2] Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[3] SWITCHING AND NEGATIVE RESISTANCE IN THIN FILMS OF NICKEL OXIDE [J].

BRUYERE, JC ;

CHAKRAVERTY, BK .

APPLIED PHYSICS LETTERS, 1970, 16 (01) :40-+

[4] AVALANCHE-INDUCED NEGATIVE RESISTANCE IN THIN OXIDE FILMS [J].

CHOPRA, KL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :184-&

[5] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[6] Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition [J].

Fors, R ;

Khartsev, SI ;

Grishin, AM .

PHYSICAL REVIEW B, 2005, 71 (04)

[7] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

[8] Effect of thermal treatment in oxygen, nitrogen, and air atmospheres on the electrical transport properties of zinc oxide thin films [J].

Hamad, O ;

Braunstein, G ;

Patil, H ;

Dhere, N .

THIN SOLID FILMS, 2005, 489 (1-2) :303-309

[9] Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films [J].

Hamaguchi, M ;

Aoyama, K ;

Asanuma, S ;

Uesu, Y ;

Katsufuji, T .

APPLIED PHYSICS LETTERS, 2006, 88 (14)

[10] Electrical conductivity mechanisms in zinc oxide thin films deposited by pulsed laser deposition using different growth environments [J].

Heluani, S. P. ;

Braunstein, G. ;

Villafuerte, M. ;

Simonelli, G. ;

Duhalde, S. .

THIN SOLID FILMS, 2006, 515 (04) :2379-2386