Properties and preparation conditions of carbon nitride thin films deposited by laser CVD

被引：27

作者：

Falk, F ^{[1
]}

Meinschien, J ^{[1
]}

Schuster, K ^{[1
]}

Stafast, H ^{[1
]}

机构：

[1] Inst Phys Hochtechnol, D-07743 Jena, Germany

来源：

CARBON | 1998年 / 36卷 / 5-6期

关键词：

chemical vapor deposition; X-ray photoelectron spectroscopy (XPS);

D O I：

10.1016/S0008-6223(98)00003-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous CN, thin films with x up to 1.1 were obtained by ArF excimer laser chemical vapor deposition (CVD) from NH3/CCl4 or cyanogen azide NCN3 as precursors in the substrate temperature range of 200-650 degrees C. The films are optically transparent and electrically insulating. Depending on the preparation conditions their Tauc gap varies between 1.4 and 3.1 eV. The X-ray photon spectroscopy C 1s and N 1s peaks reveal two bonding states of carbon and nitrogen in the bulk, respectively. When heated to 450 degrees C the CNx films start to decompose into HCN, (CN)(2) and N-2 to completely vanish at 700 degrees C. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：765 / 769

页数：5

共 17 条

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