High-temperature conductivity in chemical bath deposited copper selenide thin films

被引：99

作者：

Dhanam, M ^{[1
]}

Manj, PK ^{[1
]}

Prabhu, RR ^{[1
]}

机构：

[1] Bharathiar Univ, Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 280卷 / 3-4期

关键词：

characterization; liquid phase epitaxy; semiconducting materials;

D O I：

10.1016/j.jcrysgro.2005.01.111

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports high-temperature (305-523 K) electrical studies of chemical bath deposited copper (1) selenide (Cu2-xSe) and copper (II) selenide (Cu3Se2) thin films. Cu2-xSe and Cu3Se2 have been prepared on glass substrates from the same chemical bath at room temperature by controlling the pH. From X-ray diffraction (XRD) profiles, it has been found that Cu2-xSe and Cu3Se2 have cubic and tetragonal structures, respectively. The composition of the chemical constituent in the films has been confirmed from XRD data and energy-dispersive X-ray analysis (EDAX). It has been found that both phases of copper selenide thin films have thermally activated conduction in the high-temperature range. In this paper we also report the variation of electrical parameters with film thickness and the applied voltage. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：425 / 435

页数：11

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