Defect structure of oxide ferroelectrics - valence state, site of incorporation, mechanisms of charge compensation and internal bias fields

被引:130
作者
Eichel, Ruediger-A. [1 ]
机构
[1] Tech Univ Darmstadt, Eduard Zintl Inst, D-64287 Darmstadt, Germany
关键词
ferroelectrics; lead zirconate titanate; PZT; doping; defect structure; valence state; site of incorporation; charge compensation; internal bias fields; aging; fatigue; EPR;
D O I
10.1007/s10832-007-9068-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The defect structure of aliovalent transition-metal and rare-earth functional centers in ferroelectric perovskite oxides is characterized by means of multifrequency electron paramagnetic resonance spectroscopy, assisted by density-functional theory calculations. The review is mainly focused on lead zirconate titanate (Pb[ZrxTi1- x]O-3, PZT) compounds. However, where available also results on ferroelectric 'lead-free' compounds are discussed. The results include the formation of charged (Fe'(Zr,Ti) - V-O center dot center dot)center dot defect dipoles, causing internal bias fields, multivalence manganese centers, acceptor-type copper functional centers creating isolated oxygen vacancies that promote ionic conductivity, as well as Gd-Pb center dot Pb donor-type centers. Moreover, the impact of the defect structure on macroscopic material properties is discussed.
引用
收藏
页码:9 / 21
页数:13
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