Scaling planar silicon devices

被引:27
作者
Chuang, CT [1 ]
Bernstein, K
Joshi, RV
Puri, R
Kim, K
Nowak, EJ
Ludwig, T
Aller, I
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA
[3] IBM Entwicklung GmbH, Boblingen, Germany
来源
IEEE CIRCUITS & DEVICES | 2004年 / 20卷 / 01期
关键词
D O I
10.1109/MCD.2004.1263403
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI has extended VLSI performance while introducing unique idiosyncracies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.
引用
收藏
页码:6 / 19
页数:14
相关论文
共 63 条
[1]  
ALLEN DH, ISSCC 1999, P438
[2]  
ALLER L, 1999, P IEEE INT SOI C, P40
[3]  
Asheghi M, 2002, 2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, P51, DOI 10.1109/SOI.2002.1044411
[4]   Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well [J].
Balandin, A ;
Wang, KL .
PHYSICAL REVIEW B, 1998, 58 (03) :1544-1549
[5]  
CANADA M, ISSCC 1999, P430
[6]  
CHANG L, IEDM 2001, P99
[7]  
Chang LL, 2003, IEEE CIRCUITS DEVICE, V19, P35
[8]  
Chuang C. T., 1999, Proceedings 1999 Design Automation Conference (Cat. No. 99CH36361), P709, DOI 10.1109/DAC.1999.782045
[9]   SOI for digital CMOS VLSI: Design considerations and advances [J].
Chuang, CT ;
Lu, PF ;
Anderson, CJ .
PROCEEDINGS OF THE IEEE, 1998, 86 (04) :689-720
[10]  
Chuang CT, 2002, 2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, P121, DOI 10.1109/SOI.2002.1044444