ILGAR technology IV:: ILGAR thin film technology extended to metal oxides

被引：33

作者：

Bär, M ^{[1
]}

Muffler, HJ ^{[1
]}

Fischer, CH ^{[1
]}

Lux-Steiner, MC ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Abt Photochem S 2, Dept Heterogeneous Mat Syst, D-14109 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

chemical deposition; thin film; zinc oxide; buffer layer;

D O I：

10.1016/S0927-0248(00)00270-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An ion layer gas reaction (ILGAR) technique for the deposition of thin metal oxide films such as zinc oxide has been developed. In a cyclic process a solid precursor layer was applied on a substrate by dipping in a Zn(ClO4)(2) solution and subsequent drying. Reaction with gaseous NH3/H2O led to a hydroxide layer which is thermally dehydrated to ZnO. The steps were repeated until the desired layer thickness was obtained. Under optimized conditions the chlorine remainder lay below 0.3 at%. X-ray-diffraction revealed a preferred orientation concerning the (002) plane. The band gap was determined to E-gap = 3.38 eV. First ZnO/CIGSSe solar cells showed efficiencies of 10.7%. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：113 / 120

页数：8

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