Refractive index of direct bandgap semiconductors near the absorption threshold: Influence of excitonic effects

被引：43

作者：

Tanguy, C

机构：

[1] France Telecom., Ctr. Natl. d'Etud. des Telecom., Paris B, Laboratoire de Bagneux, 92225 Bagneux Cedex

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 10期

关键词：

D O I：

10.1109/3.538780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semi-empirical expression for the refractive index, which takes excitonic effects correctly into account, is given for direct bandgap semiconductors in the vicinity of the absorption threshold. This expression, which can be useful even at low temperatures, is compared with previous models and applied to the case of gallium arsenide.

引用

页码：1746 / 1751

页数：6

共 55 条

[1] EXCITONIC EFFECTS IN THE OPTICAL-SPECTRUM OF GAAS [J].