Modification of a shallow 2DEG by AFM lithography

被引：27

作者：

Nemutudi, R ^{[1
]}

Curson, NJ ^{[1
]}

Appleyard, NJ ^{[1
]}

Ritchie, DA ^{[1
]}

Jones, GAC ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, England

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷

关键词：

atomic force microscope (AFM); local anodic oxidation (LAO); two dimensional electron gas (2DEG);

D O I：

10.1016/S0167-9317(01)00478-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A conducting tip of an atomic force microscope (AFM) is used to induce ultra-small oxide patterns on metallic (Ti) thin film and semiconducting (GaAs) surfaces. The oxide is used to deplete a shallow two-dimensional electron gas (2DEG) formed at a GaAs/AlGaAs interface, 274 Angstrom beneath the surface. The depleted portion of the 2DEG is rendered highly resistive and remains insulating over a wide voltage range at low temperatures. Furthermore, in-plane side gates, defined by oxide lines, are used to constrict the 2DEG into a narrow one-dimensional (1D) electron channel which exhibits quantized conductance at low temperatures. A relatively high sub-band energy spacing (similar to 5.5 meV) is achieved between the first two sub-bands, demonstrating the steep lateral confining potential provided by side gates through oxide walls. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：967 / 973

页数：7

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