Semiconductor quantum point contact fabricated by lithography with an atomic force microscope

被引：86

作者：

Held, R ^{[1
]}

Heinzel, T ^{[1
]}

Studerus, P ^{[1
]}

Ensslin, K ^{[1
]}

Holland, M ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECT,GLASGOW G12 8QQ,LANARK,SCOTLAND

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 18期

关键词：

D O I：

10.1063/1.120137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the experimental realization of a quantum point contact in a semiconductor heterostructure by lithography with an atomic force microscope (AFM). A thin, homogeneous titanium film on top of the chip surface was patterned by local anodic oxidation, induced by a current applied to an n-doped AFM tip. We demonstrate that self-aligned gate structures in the sub-micron regime can be fabricated with this technique. (C) 1997 American Institute of Physics. [S0003-6951(97)02642-9].

引用

页码：2689 / 2691

页数：3

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