CONTROL OF CURRENT IN 2DEG CHANNEL BY OXIDE WIRE FORMED USING AFM

被引：84

作者：

ISHII, M

MATSUMOTO, K

机构：

[1] Electrotechnical Laboratory, Tsukuba-shi, Ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

AFM; OXIDE WIRE; DELTA-DOPED HEMT; 2DEG CHANNEL; DEPLETION LAYER; DRAIN CURRENT;

D O I：

10.1143/JJAP.34.1329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

WE have succeeded in depleting a two-dimensional electron gas channel using an oxide wire formed with an atomic force microscope. Currents in the channel depend on the height of the oxide wire on the delta-doped high-electron-mobility transistor. The current in the sample with a 20-nm-thick oxide wire is approximately one hundred times lower than that without the wire.

引用

页码：1329 / 1331

页数：3

共 8 条

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