Exclusion zone model of islands spatial distribution in molecular beam epitaxy

被引:3
作者
Trofimov, VI [1 ]
机构
[1] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia
关键词
island space distribution; Stranski-Krastanov mode; quantum dots;
D O I
10.1016/S0040-6090(00)01471-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple model of islands spatial distribution based on the statistical nucleation model combined with a forbidden for nucleation zone is proposed. Islands nucleate at random points of uncovered substrate with a constant rate and then grow in a hemisphere at a constant velocity. Around each growing island there exists an exclusion zone of some width L within which nucleation is forbidden, while outside this zone islands continue to germinate in a usual spatially random fashion, By this model formulas for the probability that an arbitrarily chosen surface region at any given time moment t will be either empty or contain just one island, W-0(t) and W-1(t), respectively, are derived. Calculations with this formula shows that a simple introduction of the forbidden zone leads to some ordering degree in a spatial distribution of islands, similar to that observed in experiments, and provides a good quantitative coincidence with experiment at reasonable values of the model parameter L. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:64 / 66
页数:3
相关论文
共 7 条
[1]  
BANYAI L, 1993, SEMICONDUCTOR QUANTU
[2]   Equilibrium phase diagrams for dislocation free self-assembled quantum dots [J].
Daruka, I ;
Barabasi, AL .
APPLIED PHYSICS LETTERS, 1998, 72 (17) :2102-2104
[3]   Nucleation transitions for InGaAs Islands on vicinal (100) GaAs [J].
Leon, R ;
Senden, TJ ;
Kim, Y ;
Jagadish, C ;
Clark, A .
PHYSICAL REVIEW LETTERS, 1997, 78 (26) :4942-4945
[4]   Equilibrium phase diagrams for Stranski-Krastanov structure mode of III-V ternary quantum dots [J].
Nakajima, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4A) :1875-1883
[5]  
NOETZEL R, 1993, ADV MATER, V5, P22
[6]   Self-assembled Ge nanowires grown on Si(113) [J].
Omi, H ;
Ogino, T .
APPLIED PHYSICS LETTERS, 1997, 71 (15) :2163-2165
[7]  
TROFIMOV VI, 1993, GROWTH MORPHOLOGY TH, P272