Nucleation transitions for InGaAs Islands on vicinal (100) GaAs

被引：89

作者：

Leon, R ^{[1
]}

Senden, TJ ^{[1
]}

Kim, Y ^{[1
]}

Jagadish, C ^{[1
]}

Clark, A ^{[1
]}

机构：

[1] AUSTRALIAN NATL UNIV,INST ADV STUDIES,RES SCH PHYS SCI & ENGN,DEPT APPL MATH,CANBERRA,ACT 0200,AUSTRALIA

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.78.4942

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Differences in InGaAs island nucleation on vicinal (100) GaAs surfaces as a function of miscut angle are presented. Arrhenius plots of saturation island densities show changes in activation energy and critical cluster size, which are interpreted as resulting from nucleation through different mechanisims: homogeneously (on terraces) and heterogeneously on monatomic and multiatomic steps. Furthermore, a link between step separation and island; uniformity is observed. Step availability is found to be a major determinant of island uniformity at temperatures where clusters are not mobile.

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页码：4942 / 4945

页数：4

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