GaAs Schottky wrap-gate binary-decision-diagram devices for realization of novel single electron logic architecture

被引:31
作者
Kasai, S [1 ]
Amemiya, Y [1 ]
Hasegawa, H [1 ]
机构
[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 0608628, Japan
来源
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年
关键词
D O I
10.1109/IEDM.2000.904388
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Novel single electron binary-decision-diagram (BDD) node devices and circuits based on Schottky wrap-gate (WPG) control of AlGaAs/GaAs nanowires were designed, fabricated and characterized for the first time. The WPG BDD node device showed clear path switching as well as conductance oscillation by WPG voltage control. WPG-based BDD OR logic circuits were also successfully fabricated. It is also shown that more complex-functional BDD circuits can be realized by suitable layouts of WPGs and nanowires.
引用
收藏
页码:585 / 588
页数:4
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