Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors

被引:5
作者
Kasai, S
Satoh, Y
Hasegawa, H
机构
[1] Hokkaido Univ, Res Ctr Interfce Quantum Elect, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
来源
PHYSICA B | 1999年 / 272卷 / 1-4期
关键词
single-electron transistor (SET); Schottky wrap gate (WPG); GaAs; conductance oscillation;
D O I
10.1016/S0921-4526(99)00373-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Conductance oscillation characteristics in GaAs-based Schottky wrap gate (WPG) single-electron transistors (SETs) were investigated both experimentally and theoretically in view of application as a key switching device in future quantum-integrated circuits. Fabricated WPG SETs showed that clear conductance oscillation characteristics with a small number of high conductance peaks. A simple theory based on a quantum mechanical treatment reproduced qualitatively the features of the experimentally observed conductance peaks, indicating that the resonant tunneling contributes to currents in the WPG SETs. However, quantitatively, a discrepancy existed between theory and experiment on the temperature dependence of peak heights. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:88 / 91
页数:4
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