Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films

被引:38
作者
Lu, ZY [1 ]
Zhang, XG
Pantelides, ST
机构
[1] Oak Ridge Natl Lab, Div Math & Comp Sci, Oak Ridge, TN 37831 USA
[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
关键词
D O I
10.1103/PhysRevLett.94.207210
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Quantum-well (QW) states in nonmagnetic metal films between magnetic layers are known to be important in spin-dependent transport, but QW states in magnetic films remains elusive. Here we identify the conditions for resonant tunneling through QW states in magnetic films and report first principles calculations of Fe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr. We show that, at resonance, the current increases by 1 to 2 orders of magnitude. The tunneling magnetoresistance ratio is much larger than in simple spin tunnel junctions and is positive (negative) for majority- (minority-) spin resonances, with a large asymmetry between positive and negative biases. The results can serve as a basis for novel spintronic devices.
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页数:4
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