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High tunnel magnetoresistance at room temperature in fully epitaxial Fe/MgO/Fe tunnel junctions due to coherent spin-polarized Tunneling

被引：218
作者：
Yuasa, S
Fukushima, A
Nagahama, T
Ando, K
Suzuki, Y
机构：
[1] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 4B期
关键词：
tunnel magnetoresistance; TMR effect; magnetic tunnel junction; MRAM; epitaxial growth;
D O I：
10.1143/JJAP.43.L588
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We fabricated fully epitaxial Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions (MTJs) and observed a magnetoresistance (MR) ratio of 88% at T = 293 K (146% at T = 20 K), the highest value yet reported. The origin of the high MR ratio is not the diffusive tunneling' of Julliere's model but the coherent spin-polarized tunneling in epitaxial MTJs, in which only the electrons with totally symmetric wave functions with respect to the barrier-normal axis can tunnel. The bias-voltage dependence of the MR was very small, resulting in a high output voltage of 380 mV. This high voltage will help overcome problems in the development of high-density magnetoresistive random-access-memory (MRAM).
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页码：L588 / L590
页数：3
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