High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

被引：139

作者：

Faure-Vincent, J ^{[1
]}

Tiusan, C ^{[1
]}

Jouguelet, E ^{[1
]}

Canet, F ^{[1
]}

Sajieddine, M ^{[1
]}

Bellouard, C ^{[1
]}

Popova, E ^{[1
]}

Hehn, M ^{[1
]}

Montaigne, F ^{[1
]}

Schuhl, A ^{[1
]}

机构：

[1] Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1586785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (t(MgO)), we have strongly enhanced the tunnel magnetoresistance. Values up to similar to100% at 80 K (similar to67% at room temperature) have been observed with t(MgO) = 2.5 nm. This tunnel magnetoresistance ratio, which is much larger than the one predicted by the Julliere's model, can be understood in the framework of ab initio calculations. (C) 2003 American Institute of Physics.

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页码：4507 / 4509

页数：3

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