Epitaxial MgO layer for low-resistance and coupling-free magnetic tunnel junctions

被引：55

作者：

Popova, E

Faure-Vincent, J

Tiusan, C

Bellouard, C

Fischer, H

Hehn, M

Montaigne, F

Alnot, M

Andrieu, S

Schuhl, A

Snoeck, E

da Costa, V

机构：

[1] UHP, CNRS, LPM, F-54506 Vandoeuvre Les Nancy, France

[2] CNRS, CEMES, F-31055 Toulouse, France

[3] IPCMS, F-67037 Strasbourg, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期

关键词：

D O I：

10.1063/1.1498153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxially grown magnetic tunnel junctions MgO(100)/Fe/MgO/Fe/Co/Pd have been elaborated by molecular beam epitaxy, with insulating layer thickness down to 0.8 nm. The continuity of this layer was checked at different spatial scales by means of morphological (high resolution transmission electronic microscopy), electric (local impedance), and magnetic (magnetoresistance and hysteresis loop) measurements. These junctions show a low resistance (4 kOmega mum(2)), tunnel magnetoresistance up to 17%, and a very small interlayer magnetic coupling. (C) 2002 American Institute of Physics.

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页码：1035 / 1037

页数：3

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