Raman fingerprint of charged impurities in graphene

被引：836

作者：

Casiraghi, C.

Pisana, S.

Novoselov, K. S.

Geim, A. K.

Ferrari, A. C.

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England

[2] Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2818692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage. This reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to similar to 10(13) cm(-2) are estimated from the G peak shift and width and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on a scale of less than 1 mu m. (c) 2007 American Institute of Physics.

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页数：3

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