Calculation of Thermoelectric Transport Properties in Heterostructures

被引：4

作者：

Bachmann, M. ^{[1
]}

Czerner, M. ^{[1
]}

Heiliger, C. ^{[1
]}

机构：

[1] Univ Giessen, Inst Phys 1, D-6300 Giessen, Germany

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 05期

关键词：

Electronic transport in interface structures; nonequilibrium Green's function formalism; thermoelectric effects; calculation of the Seebeck coefficient; ZnO grain boundaries; ZNO; DONOR;

D O I：

10.1007/s11664-010-1458-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a model that can predict the Seebeck coefficient of different interfaces. Within this model we solve the Poisson equation and Schrodinger equation self-consistently to obtain the potential profile across the interface. Then we use the nonequilibrium Green's function (NEGF) method to calculate the transport properties across the interface. We apply our model to a ZnO grain boundary, describing the boundary as a back-to-back Schottky barrier. The potential profile in the considered system is similar to a rigid-shift potential, and thus the Seebeck coefficient obtained from the rigid-shift potential shows no deviation in comparison with the Seebeck coefficient obtained from the self-consistent potential.

引用

页码：577 / 582

页数：6

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