Oxygen nonstoichiometry of MBE-grown cuprate films to lose or give high-Tc superconductivity

被引:8
作者
Naito, M [1 ]
Sato, H [1 ]
Yamamoto, H [1 ]
机构
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源
SUPERCONDUCTING AND RELATED OXIDES: PHYSICS AND NANOENGINEERING III | 1998年 / 3481卷
关键词
high-T-c superconductors; oxygen nonstoichiometry; surface/interface analysis; (Nd; Ce)(2)CuO4; La2CuO4+delta; Ba2CuO4-delta;
D O I
10.1117/12.335878
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper describes our recent progress in MBE growth and the surface/interface investigation of high-T-c superconducting films. The careful XPS analyses of the in-situ surface and interface reaction for MBE grown (Nd,Ce)(2)CuO4 films demonstrate that correct oxygen stoichiometry is the most crucial issue in preparing high-quality films and improving the characteristics of tunnel junctions. In other words, oxygen nonstoichiometry easily occurs at the surface or interface in cuprates. By utilizing this fact in a positive way, we have succeeded in preparing of the highest quality La2CuO4+delta films ever and have discovered a new superconducting Ba2CuO4+delta film by a simple and efficient oxidation process using ozone in a vacuum chamber.
引用
收藏
页码:214 / 225
页数:12
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