Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate

被引：1606

作者：

Zhan, Yongjie ^{[1
]}

Liu, Zheng ^{[1
]}

Najmaei, Sina ^{[1
]}

Ajayan, Pulickel M. ^{[1
]}

Lou, Jun ^{[1
]}

机构：

[1] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA

来源：

SMALL | 2012年 / 8卷 / 07期

基金：

美国国家科学基金会;

关键词：

molybdenum disulphide; 2D crystals; atomic layers; chemical vapor deposition; X-RAY PHOTOELECTRON; MOO3; NANOBELTS; GRAPHENE FILMS; TRANSISTORS; FULLERENES; NANOTUBES; SPECTRA;

D O I：

10.1002/smll.201102654

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Atomic-layered MoS 2 is synthesized directly on SiO 2 substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：966 / 971

页数：6

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