Electronic structure characterization of six semiconductors through their localized Wannier functions

被引:5
作者
Bert, A
Llunell, M
Dovesi, R
Zicovich-Wilson, CM
机构
[1] Univ Autonoma Estado Morelos, Fac Ciencias, Cuernavaca 62210, Morelos, Mexico
[2] Univ Turin, Dipartimento Chim IFM, I-10125 Turin, Italy
[3] Unita INFM Torino, I-10125 Turin, Italy
关键词
D O I
10.1039/b307731d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The crystalline orbitals of six semiconductors (Si, C, BP, AlP, SiC and BN) are localized according to a Wannier-Boys mixed scheme recently implemented. The degree of localization, size and shape of the localized crystalline orbitals are documented by means of various indices (centroid position, second order central moment tensor, its eigenvalues and principal axes, Mulliken population analysis and atomic localization indices) and through their graphical representations. Systematic trends along the series are observed, and are correlated to the Pauling electronegativity scale and the calculated band gap.
引用
收藏
页码:5319 / 5325
页数:7
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