Preservation of polytypic structure in implanted 4H-SiC(1(1)over-bar00)

被引：22

作者：

Satoh, M

Okamoto, K

Nakaike, Y

Kuriyama, K

Kanaya, M

Ohtani, N

机构：

[1] Hosei Univ, Res Ctr Ion Beam Technol, Koganei, Tokyo 184, Japan

[2] Hosei Univ, Coll Engn, Koganei, Tokyo 184, Japan

[3] Nippon Steel Corp Ltd, Adv Technol Res Labs, Kanagawa, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

关键词：

SiC; (1(1)over-bar-00)-face; ion-implantation; polytypic structure;

D O I：

10.1016/S0168-583X(98)00888-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The polytypic structure of implanted layers in (1 (1) over bar 00)-oriented 4H-SiC has been investigated using Rutherford backscattering spectrometry (RBS) combined with channeling technique and cross-sectional transmission electron microsopy (XTEM). Samples have been implanted with 400 keV Ga to a dose of 5 x 10(15)/cm(2) through a 200 nm-thick SiO2 layer at room temperature. The implantation damage is completely removed by annealing at 1700 degrees C for 30 min. The recrystallization process of the implanted layer in (1 (1) over bar 00)-oriented 4H-SiC is different from that for (0001)-oriented SiC, in which the implanted layer is highly defective and contains various polytype crystals such as 3C. The XTEM investigation reveals that the implanted layer in SIC (1 (1) over bar 00) is regrown with the original polytype of 4H. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：567 / 572

页数：6

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