SUBLIMATION GROWTH OF SIC SINGLE-CRYSTALLINE INGOTS ON FACES PERPENDICULAR TO THE (0001) BASAL-PLANE

被引：158

作者：

TAKAHASHI, J

KANAYA, M

FUJIWARA, Y

机构：

[1] Electronics Research Laboratories, Nippon Steel Corporation, Sagamihara, 229

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 135卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90726-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SiC single crystalline ingots have been grown on faces perpendicular to the SiC (0001) basal plane by a sublimation method. It is shown that a polytypic structure of the grown crystal succeeds perfectly to that of the seed. Hexagonal etch pits are not observed, which are always detected on crystals grown on {0001} faces. Moreover, this growth eliminates defects penetrating a crystal in the form of empty tubes. We discuss how the relation between dislocations and growth mechanism of SiC is influenced by the seed orientation.

引用

页码：61 / 70

页数：10

共 21 条

[1]

Acheson A. G, 1892, England Patent, Patent No. 17911

[2] DISLOCATIONS IN SILICON CARBIDE [J].