Ab initio calculation of ε2(ω) including the electron-hole interaction:: Application to GaN and CaF2

被引:157
作者
Benedict, LX [1 ]
Shirley, EL [1 ]
机构
[1] Natl Inst Stand & Technol, Phys Lab, Opt Technol Div, Gaithersburg, MD 20899 USA
关键词
D O I
10.1103/PhysRevB.59.5441
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a computationally efficient first-principles scheme to calculate epsilon(2)(omega) for crystalline insulators, including the electron-hole interaction. The effective Hamiltonian for electron-hole pairs contains both the exchange and direct parts of this interaction. An iterative scheme is used in which the omega moments of epsilon(2)(omega) are computed by repeated action of the Hamiltonian on electron-hole pair states. The scheme is applied to two insulators where there are significant experimental uncertainties in their ultraviolet optical properties: GaN and CaF2. [SO163-1829(99)08507-0].
引用
收藏
页码:5441 / 5451
页数:11
相关论文
共 38 条
  • [1] Ab initio calculation of excitonic effects in the optical spectra of semiconductors
    Albrecht, S
    Reining, L
    Del Sole, R
    Onida, G
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (20) : 4510 - 4513
  • [2] DIELECTRIC FUNCTION OF CAF2 BETWEEN 10 AND 35 EV
    BARTH, J
    JOHNSON, RL
    CARDONA, M
    FUCHS, D
    BRADSHAW, AM
    [J]. PHYSICAL REVIEW B, 1990, 41 (05): : 3291 - 3294
  • [3] Optical absorption of insulators and the electron-hole interaction: An ab initio calculation
    Benedict, LX
    Shirley, EL
    Bohn, RB
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (20) : 4514 - 4517
  • [4] Theory of optical absorption in diamond, Si, Ge, and GaAs
    Benedict, LX
    Shirley, EL
    Bohn, RB
    [J]. PHYSICAL REVIEW B, 1998, 57 (16): : R9385 - R9387
  • [7] OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE
    CHRISTENSEN, NE
    GORCZYCA, I
    [J]. PHYSICAL REVIEW B, 1994, 50 (07): : 4397 - 4415
  • [8] Temperature-dependent absorption measurements of excitons in GaN epilayers
    Fischer, AJ
    Shan, W
    Song, JJ
    Chang, YC
    Horning, R
    Goldenberg, B
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (14) : 1981 - 1983
  • [9] SELF-ENERGY OPERATORS AND EXCHANGE-CORRELATION POTENTIALS IN SEMICONDUCTORS
    GODBY, RW
    SCHLUTER, M
    SHAM, LJ
    [J]. PHYSICAL REVIEW B, 1988, 37 (17): : 10159 - 10175
  • [10] ESTIMATING AVERAGE DENSITIES OF STATES FOR DISORDERED-SYSTEMS
    HAERLE, R
    HAYDOCK, R
    TE, RL
    [J]. COMPUTER PHYSICS COMMUNICATIONS, 1995, 90 (01) : 81 - 86