A dual-wavelength indium gallium nitride quantum well light emitting diode

被引：121

作者：

Ozden, I ^{[1
]}

Makarona, E

Nurmikko, AV

Takeuchi, T

Krames, M

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

[3] Agilent Technol Labs, Palo Alto, CA 94304 USA

[4] Lumileds Lighting, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 16期

关键词：

D O I：

10.1063/1.1410345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p(++)/n(++) InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale. (C) 2001 American Institute of Physics.

引用

页码：2532 / 2534

页数：3

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