Resonant-cavity InGaN quantum-well blue light-emitting diodes

被引：92

作者：

Song, YK

Diagne, M

Zhou, H

Nurmikko, AV ^{[1
]}

Schneider, RP

Takeuchi, T

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] Agilent Labs, Palo Alto, CA 94303 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1310625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe progress in blue resonant-cavity light-emitting diodes, based on InGaN/GaN quantum-well heterostructures. We have fabricated vertical-microcavity devices in which either one or both mirrors forming the cavity are patterned, high-reflectivity dielectrics Bragg reflectors. The results suggest that a blue vertical-cavity diode laser may be feasible by this approach. (C) 2000 American Institute of Physics. [S0003-6951(00)00338-7].

引用

页码：1744 / 1746

页数：3

共 9 条

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