A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

被引：46

作者：

Song, YK ^{[1
]}

Diagne, M

Zhou, H

Nurmikko, AV

Carter-Coman, C

Kern, RS

Kish, FA

Krames, MR

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

[3] Hewlett Packard Co, Div Optoelect, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 24期

关键词：

D O I：

10.1063/1.123232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vertical injection, light emitting InGaN quantum well diode has been demonstrated by separating the nitride heterostructure from its sapphire substrate by ultraviolet laser photoablation within a process scheme that allows transferring the devices to a host substrate. The incorporation of a dielectric multilayer stack to the device is shown to be a first practical step towards a resonant cavity light emitting diode. (C) 1999 American Institute of Physics. [S0003-6951(99)03124-1].

引用

页码：3720 / 3722

页数：3

共 12 条

[1]

BULMAN GE, 1998, UNPUB C LAS EL SAN F

[2]

DAVIS R, COMMUNICATION

[3]

Hofler GE, 1996, APPL PHYS LETT, V69, P803, DOI 10.1063/1.117897

[4] ROOM-TEMPERATURE OPTICALLY PUMPED BLUE-GREEN VERTICAL-CAVITY SURFACE-EMITTING LASER [J].