InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates

被引：131

作者：

Nakamura, S ^{[1
]}

Senoh, M ^{[1
]}

Nagahama, S ^{[1
]}

Iwasa, N ^{[1
]}

Yamada, T ^{[1
]}

Matsushita, T ^{[1
]}

Kiyoku, H ^{[1
]}

Sugimoto, Y ^{[1
]}

Kozaki, T ^{[1
]}

Umemoto, H ^{[1
]}

Sano, M ^{[1
]}

Chocho, K ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.122016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

After obtaining an epitaxially laterally overgrown GaN on sapphire by the metalorganic chemical vapor deposition method, GaN growth was continued up to a thickness of 200 mu m by a hydride vapor phase epitaxy method. The InGaN multi-quantum-well-structure laser diode (LD) was grown on a free-standing GaN substrate, which was obtained by removing the sapphire substrate. The LDs with cleaved mirror facets showed an output power as high as 160 mW under room-temperature continuous-wave (CW) operation. The fundamental transverse mode was observed up to an output power of 80 mW. The lifetime of the LDs at a constant output power of 5 mW was about 180 h under CW operation at an ambient temperature of 50 degrees C, due to a high threshold current density of 14 kA/cm(2). (C) 1998 American Institute of Physics.

引用

页码：832 / 834

页数：3

共 9 条

[1] Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC [J].

Bulman, GE ;

Doverspike, K ;

Sheppard, ST ;

Weeks, TW ;

Kong, HS ;

Dieringer, HM ;

Edmond, JA ;

Brown, JD ;

Swindell, JT ;

Schetzina, JF .

ELECTRONICS LETTERS, 1997, 33 (18) :1556-1557

[2] Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure [J].

Hofstetter, D ;

Bour, DP ;

Thornton, RL ;

Johnson, NM .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1650-1652

[3] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[4] InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy [J].

Kuramata, A ;

Domen, K ;

Soejima, R ;

Horino, K ;

Kubota, S ;

Tanahashi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1130-L1132

[5]

Mack MP, 1997, MRS INTERNET J N S R, V2, part. no.

[6] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571

[7] Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy [J].

Nam, OH ;

Bremser, MD ;

Zheleva, TS ;

Davis, RF .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2638-2640

[8]

NKAMURA S, 1997, BLUE LASER DIODE

[9] Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy [J].

Usui, A ;

Sunakawa, H ;

Sakai, A ;

Yamaguchi, AA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B) :L899-L902

← 1 →