Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

被引：113

作者：

Nakada, N

Nakaji, M

Ishikawa, H

Egawa, T

Umeno, M

Jimbo, T

机构：

[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan

[3] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 14期

关键词：

D O I：

10.1063/1.126171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 mu W under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current. (C) 2000 American Institute of Physics. [S0003-6951(00)03314-3].

引用

页码：1804 / 1806

页数：3

共 11 条

[1] ALN-GAN QUARTER-WAVE REFLECTOR STACK GROWN BY GAS-SOURCE MBE ON (100)GAAS
FRITZ, IJ
DRUMMOND, TJ
[J]. ELECTRONICS LETTERS, 1995, 31 (01) : 68 - 69
[2] GAAS/GAALAS SURFACE EMITTING IR LED WITH BRAGG REFLECTOR GROWN BY MOCVD
KATO, T
SUSAWA, H
HIROTANI, M
SAKA, T
OHASHI, Y
SHICHI, E
SHIBATA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 832 - 835
[3] REFLECTIVE FILTERS BASED ON SINGLE-CRYSTAL GAN/ALXGA1-XN MULTILAYERS DEPOSITED USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
KHAN, MA
KUZNIA, JN
VANHOVE, JM
OLSON, DT
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (12) : 1449 - 1451
[4] High-reflectivity GaN GaAlN Bragg mirrors at blue green wavelengths grown by molecular beam epitaxy
Langer, R
Barski, A
Simon, J
Pelekanos, NT
Konovalov, O
André, R
Dang, LS
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (24) : 3610 - 3612
[5] Ridge-geometry InGaN multi-quantum-well-structure laser diodes
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Sugimoto, Y
Kiyoku, H
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (10) : 1477 - 1479
[6] Distributed Bragg reflectors based on AlN/GaN multilayers
Ng, HM
Doppalapudi, D
Iliopoulos, E
Moustakas, TD
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (07) : 1036 - 1038
[7] Interface control of GaN/AlGaN quantum well structures in MOVPE growth
Shirasawa, T
Mochida, N
Inoue, A
Honda, T
Sakaguchi, T
Koyama, F
Iga, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 124 - 127
[8] SHIRASAWA T, 1997, P 2 INT C NITR SEM, pP2
[9] Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition
Someya, T
Arakawa, Y
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (25) : 3653 - 3655
[10] SOMEYA T, 1998, IEEE 16 INT SEM LAS, pPD1

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