ALN-GAN QUARTER-WAVE REFLECTOR STACK GROWN BY GAS-SOURCE MBE ON (100)GAAS

被引：45

作者：

FRITZ, IJ

DRUMMOND, TJ

机构：

[1] Sandia National Laboratories, Albuquerque, NM 87185-0603

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 01期

关键词：

MOLECULAR BEAM EPITAXIAL GROWTH; NITRIDATION;

D O I：

10.1049/el:19950020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 15 period, wurtzite-structure AlN-GaN reflector stack has been grown on (100) GaAs by gas-source molecular beam epitaxy. A peak reflectance of over 90% has been realised, in agreement with a matrix-method computer simulation. Our results support the feasibility of vertical Fabry-Perot cavity optoelectronics using nitride materials.

引用

页码：68 / 69

页数：2

共 6 条

[1] CHADDA S, 1994, MATER RES SOC SYMP P, V326, P353
[2] REFRACTIVE INDEX OF GAN
EJDER, E
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02): : 445 - &
[3] REFLECTIVE FILTERS BASED ON SINGLE-CRYSTAL GAN/ALXGA1-XN MULTILAYERS DEPOSITED USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
KHAN, MA
KUZNIA, JN
VANHOVE, JM
OLSON, DT
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (12) : 1449 - 1451
[4] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
NAKAMURA, S
MUKAI, T
SENOH, M
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (13) : 1687 - 1689
[5] REFRACTION INDEX MEASUREMENTS ON AIN SINGLE CRYSTALS
PASTRNAK, J
ROSKOVCOVA, L
[J]. PHYSICA STATUS SOLIDI, 1966, 14 (01): : K5 - +
[6] BEHAVIOR OF ELECTRONIC DIELECTRIC CONSTANT IN COVALENT AND IONIC MATERIALS
WEMPLE, SH
DIDOMENI.M
[J]. PHYSICAL REVIEW B, 1971, 3 (04): : 1338 - &

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