Interface control of GaN/AlGaN quantum well structures in MOVPE growth

被引：46

作者：

Shirasawa, T

Mochida, N

Inoue, A

Honda, T

Sakaguchi, T

Koyama, F

Iga, K

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

[2] Kogakuin Univ, Dept Elect Engn, Hachioji, Tokyo 192, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

MOVPE; VCSELs; GaN/AlGaN QWs; interface control; growth interruption; AlN/GaN DBR;

D O I：

10.1016/S0022-0248(98)00184-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The interface control of GaN/AlGaN quantum well (QW) structures was studied to realize high-quality QM's. Various growth interruption programs were carried out to obtain clear X-ray satellite peaks from the QW and to obtain a good surface morphology. From AFM observations, it was clarified that the growth interruption with flowing ammonia can decrease the roughness of surfaces. Satellite peaks were observed by an X-ray diffraction of samples with suitable growth interruptions. We also demonstrated 14 pair AlN/GaN multilayer reflectors on a sapphire substrate. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：124 / 127

页数：4

共 9 条

[1] ALN-GAN QUARTER-WAVE REFLECTOR STACK GROWN BY GAS-SOURCE MBE ON (100)GAAS [J].