THRESHOLD ESTIMATION OF GAN-BASED SURFACE-EMITTING LASERS OPERATING IN ULTRAVIOLET SPECTRAL REGION

被引：41

作者：

HONDA, T

KATSUBE, A

SAKAGUCHI, T

KOYAMA, F

IGA, K

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama, 227, 4259 Nagatsuta, Midori-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 7A期

关键词：

GALLIUM NITRIDE; WIDE-GAP COMPOUND; ULTRAVIOLET LASER; SURFACE EMITTING LASER; SEMICONDUCTOR DBR;

D O I：

10.1143/JJAP.34.3527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The GaN-based vertical cavity surface emitting laser operating in the ultraviolet spectral region is proposed and its threshold current density is estimated. The calculated result indicates that low-threshold surface emitting lasers using a GaN layer as an active region can be realized by employing reasonably highly reflective mirrors such as AlN/AlGaN multilayer mirrors.

引用

页码：3527 / 3532

页数：6

共 31 条

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