Measured microwave power performance of AlGaN/GaN MODFET

被引：111

作者：

Wu, YF

Keller, BP

Keller, S

Kapolnek, D

Denbaars, SP

Mishra, UK

机构：

[1] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 09期

关键词：

D O I：

10.1109/55.536291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first microwave power measurement on GaN FET's, At 2 GHz, a class A output power density of 1.1 W/mm with a power added efficiency of 18.6% was obtained on al pm gate-length AlGaN/GaN MODFET, Mathematical simulation estimated that the transistor was operating at a channel temperature of 360 degrees C as a result of the poor thermal conductivity of the sapphire substrate. Despite this serious heating problem, the power output density still rivals GaAs MESFET's.

引用

页码：455 / 457

页数：3

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