Imaging and control of domain structures in ferroelectric thin films via scanning force microscopy

被引:439
作者
Gruverman, A
Auciello, O
Tokumoto, H
机构
[1] Joint Res Ctr Atom Technol, Angstrom Technol Partnership, Tsukuba, Ibaraki 305, Japan
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[3] Natl Inst Adv Interdisciplinary Res, JRCAT, Tsukuba, Ibaraki 305, Japan
来源
ANNUAL REVIEW OF MATERIALS SCIENCE | 1998年 / 28卷
关键词
ferroelectric domains; nanofabrication; piezoelectricity;
D O I
10.1146/annurev.matsci.28.1.101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scanning force microscopy (SFM) is becoming a powerful technique with great potential both for imaging and for control of domain structures in ferroelectric materials at the nanometer scale. Application of SFM to visualization of domain structures in ferroelectric thin films is described. Imaging methods of ferroelectric domains are based on the detection of surface charges in the noncontact mode of SFM and on the measurement of the piezoelectric response of a ferroelectric film to an external field applied by the tip in the SFM contact mode. This latter mode can be used for nondestructive evaluation of local ferroelectric and piezoelectric properties and for manipulation of domains of less than 50 nm in diameter. The effect of the film thickness and crystallinity on the imaging resolution is discussed. Scanning force microscopy is shown to be a technique well suited for nanoscale investigation of switching processes and electrical degradation effects in ferroelectric thin films.
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页码:101 / 123
页数:23
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