Epitaxial BiAlO3 thin film as a lead-free ferroelectric material

被引：45

作者：

Son, J. Y. ^{[1
]}

Park, C. S. ^{[1
]}

Shin, Y. -H. ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期

关键词：

D O I：

10.1063/1.2942387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated high quality epitaxial BiAlO3 thin films that exhibited a relatively high c/a ratio of about 1.05 with a pseudotetragonal structure. On the atomic force microscope morphology of the BiAlO3 thin film, we observed large terraces with a width of about 1000 A and terrace heights of nearly the same to one lattice constant. This indicates that the BiAlO3 thin film has an ideal layer-by-layer growth mode. The BiAlO3 thin film also showed a good ferroelectric property with a high remanent polarization of about 29 mu C/cm(2). (c) 2008 American Institute of Physics.

引用

页数：3

共 15 条

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