Full-band Monte Carlo model of electron and hole transport in strained Si including inelastic acoustic phonon scattering

Full-band Monte Carlo simulations of electron and hole transport in strained Si on Si0.7Ge0.3 have been performed with a transport model which includes a wave-vector-dependent inelastic acoustic phonon scattering rate. Only two unambiguously determined deformation potentials are needed to achieve excellent agreement with experimental drift velocity versus electric field data for unstrained Si over the very wide temperature range from 20 to 430 K. For strained Si, this model yields in-plane lattice mobilities of 3490 cm(2)/(V s) for electrons and 1760 cm(2)/(V s) for holes at 300 K. Drift velocity and energy versus electric field characteristics are given as reference for conventional device simulations. In contrast to simpler transport models, we do not find a pronounced Gunn effect at 77 K. (C) 1999 American Institute of Physics. [S0003-6951(99)04615-X].