Reliability of 1300-nm spot-size converter integrated laser diodes for low-cost optical modules in access networks

被引：17

作者：

Oohashi, H ^{[1
]}

Fukuda, M ^{[1
]}

Kondo, Y ^{[1
]}

Wada, M ^{[1
]}

Tohmori, Y ^{[1
]}

Sakai, Y ^{[1
]}

Toba, H ^{[1
]}

Itaya, Y ^{[1
]}

机构：

[1] NTT, Optoelect Labs, Kanagawa 24301, Japan

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1998年 / 16卷 / 07期

关键词：

degradation modes; failure criteria; full wafer process; low-cost optical module; median lifetime; reliability; spot-size converter integrated laser diodes; temperature characteristics;

D O I：

10.1109/50.701409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the degradation behaviors and reliability of spot-size converter integrated laser diodes fabricated using the full wafer process with dry etching and metal organic vapor phase epitaxy (MOVPE). Failure criteria applicable to actual access networks were determined based on the degradation behavior exhibited in several aging tests, and device lifetimes were then estimated. The far-field patterns and wide-temperature operation required for low-cost system application scarcely changed during degradation, even after a 150% increase in threshold current, Within this degradation range, the device life for system application is estimated to be more than 10(5) h at 60 degrees C and 10 mW.

引用

页码：1302 / 1307

页数：6

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