Shallow Donor States Induced by In-Diffused Cu in ZnO: A Combined HREELS and Hybrid DFT Study

被引：33

作者：

Qiu, Hengshan ^{[1
,2
]}

Gallino, Federico ^{[3
]}

Di Valentin, Cristiana ^{[3
]}

Wang, Yuemin ^{[1
,2
]}

机构：

[1] Ruhr Univ Bochum, Dept Phys Chem 1, D-44780 Bochum, Germany

[2] Ruhr Univ Bochum, Lab Ind Chem, D-44780 Bochum, Germany

[3] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 06期

关键词：

ROOM-TEMPERATURE; THIN-FILMS; FERROMAGNETISM;

D O I：

10.1103/PhysRevLett.106.066401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A combined experimental and first principles study of Cu defects in bulk ZnO is presented. Cu particles are epitaxially deposited on the polar O-ZnO(000 (1) over bar) surface at room temperature. Upon heating, a broadening of the quasielastic peak in high resolution electron energy loss spectra is observed, corresponding to an electronic doping effect of Cu atoms in bulk ZnO with an ionization energy of 88 meV. Cu impurities in ZnO, although commonly acting as acceptors, are presently observed to induce shallow donor states. We assign these to interstitial Cu species on the basis of a hybrid density functional study.

引用

页数：4

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