Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates

被引：4

作者：

Sale, TE ^{[1
]}

Roberts, JS ^{[1
]}

Whitbread, ND ^{[1
]}

Robson, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 4DU,S YORKSHIRE,ENGLAND

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 08期

关键词：

D O I：

10.1109/68.508711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the operation of strained layer In0.20Ga0.80As quantum well lasers grown on (211)B GaAs substrates, thus incorporating a piezoelectric field. Growth was by atmospheric pressure metal-organic vapor phase epitaxy (MOVPE). The threshold current density of a 1000 mu m x 75 mu m device is 91 A . cm(-2) and waveguide transparency is estimated at 32 A . cm(-2) for a simple separate confinement heterostructure (SCH) emitting at 982 nm.

引用

页码：983 / 985

页数：3

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