Magnetic properties of Fe films epitaxially grown on Cr/GaAs(100) by dc magnetron sputtering

被引：18

作者：

Li, B ^{[1
]}

Fermin, JR

Azevedo, A

de Aguiar, FM

Rezende, SM

机构：

[1] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

[2] Univ Zulia, Fac Ciencias, Dept Fis, Maracaibo 4001, Zulia, Venezuela

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 21期

关键词：

D O I：

10.1063/1.121082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of single-crystal Fe films by magnetron sputtering onto GaAs substrates. In order to establish the epitaxial orientation with the substrate a 100 Angstrom Cr buffer layer was rf sputtered. The crystalline and magnetic properties were studied by x-ray diffraction, ferromagnetic resonance, and Kerr effect magnetometry techniques. The theta-2 theta x-my measurements show that only the Fe (200) peak is present, and the rocking curve shows a full width half maximum of 2 degrees Ferromagnetic resonance lines exhibit a line width of about 30 Oe, and the in-plane resonance field as a function of the azimuth angle presents a fourfold symmetry with no induced anisotropy. The in-plane hard- and easy-axis magneto-optical hysteresis loop traces are consistent with the ferromagnetic resonance results. (C) 1998 American Institute of Physics.

引用

页码：2760 / 2762

页数：3

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