Structure and magnetism of the Fe/GaAs interface

被引:149
作者
Filipe, A [1 ]
Schuhl, A [1 ]
Galtier, P [1 ]
机构
[1] THOMSON CSF,CENT RECH LAB,CNRS,UNITE MIXTE RECH,F-91404 ORSAY,FRANCE
关键词
D O I
10.1063/1.119284
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the magnetic properties of Fe thin films epitaxially grown on GaAs (001) for a large range of substrate temperature. Magnetization deficiency has been observed and studied. Its dependence on both thickness and temperature clearly show the existence of a nearly half-magnetized phase at the interface, covered by ''as-bulk'' Fe. Furthermore, reflection high-energy electron diffraction studies show a transition between two bcc structures with different crystalline parameters. Transmission electron microscopy confirms the formation of this interfacial phase, for which the compound Fe3Ga2-xAsx seems to be the best candidate. (C) 1997 American Institute of Physics.
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页码:129 / 131
页数:3
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