THE EPITAXIAL-GROWTH OF FE ON GAAS(110) - DEVELOPMENT OF THE ELECTRONIC-STRUCTURE AND INTERFACE FORMATION

被引:12
作者
CARBONE, C [1 ]
JONKER, BT [1 ]
WALKER, KH [1 ]
PRINZ, GA [1 ]
KISKER, E [1 ]
机构
[1] USN, RES LAB, WASHINGTON, DC 20375 USA
关键词
Acknowledgement-We would like to thank Prof. M. Campagna for his continued interest and support. The help of Dr. W. Braun and Dr. W. Gudat with the beamline; the support of the BESSY staff and the assistance of D. Hoffmann are gratefully acknowledged. This work was partially supported by the National Research Council and by the Office of Naval Research of the United States;
D O I
10.1016/0038-1098(87)90300-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
16
引用
收藏
页码:297 / 301
页数:5
相关论文
共 23 条
[1]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[2]   SAMARIUM VALENCE CHANGES AND REACTIVE INTERDIFFUSION AT THE SI(LLL)-SM INTERFACE [J].
FRANCIOSI, A ;
WEAVER, JH ;
PERFETTI, P ;
KATNANI, AD ;
MARGARITONDO, G .
SOLID STATE COMMUNICATIONS, 1983, 47 (06) :427-430
[3]   CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J].
GRIONI, M ;
JOYCE, J ;
CHAMBERS, SA ;
ONEILL, DG ;
DELGIUDICE, M ;
WEAVER, JH .
PHYSICAL REVIEW LETTERS, 1984, 53 (24) :2331-2334
[4]   ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE [J].
GRIONI, M ;
JOYCE, JJ ;
WEAVER, JH .
PHYSICAL REVIEW B, 1985, 32 (02) :962-968
[5]   LOW TEMPERATURE REACTIONS AT SI/METAL INTERFACES; WHAT IS GOING ON AT THE INTERFACES? [J].
Hiraki, Akio .
SURFACE SCIENCE REPORTS, 1983, 3 (07) :357-412
[6]   STRUCTURE OF THE AL-GAAS(110) INTERFACE FROM AN ENERGY-MINIMIZATION APPROACH [J].
IHM, J ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1982, 26 (08) :4429-4435
[7]   ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS [J].
KAHN, A ;
CARELLI, J ;
KANANI, D ;
DUKE, CB ;
PATON, A ;
BRILLSON, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :331-334
[8]   SPIN-POLARIZED ANGLE-RESOLVED PHOTOEMISSION-STUDY OF THE ELECTRONIC-STRUCTURE OF FE(100) AS A FUNCTION OF TEMPERATURE [J].
KISKER, E ;
SCHRODER, K ;
GUDAT, W ;
CAMPAGNA, M .
PHYSICAL REVIEW B, 1985, 31 (01) :329-339
[9]   TEMPERATURE AND RECONSTRUCTION DEPENDENCE OF THE INITIAL AL GROWTH ON GAAS(001) [J].
LANDGREN, G ;
SVENSSON, SP ;
ANDERSSON, TG .
SURFACE SCIENCE, 1982, 122 (01) :55-68
[10]   THE FORMATION OF INTERFACES ON GAAS AND RELATED SEMICONDUCTORS - A REASSESSMENT [J].
LUDEKE, R .
SURFACE SCIENCE, 1983, 132 (1-3) :143-168