TEMPERATURE AND RECONSTRUCTION DEPENDENCE OF THE INITIAL AL GROWTH ON GAAS(001)

被引：28

作者：

LANDGREN, G

SVENSSON, SP

ANDERSSON, TG

机构：

来源：

SURFACE SCIENCE | 1982年 / 122卷 / 01期

关键词：

D O I：

10.1016/0039-6028(82)90058-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：55 / 68

页数：14

共 21 条

[1]

ANDERSSON TG, UNPUB J PHYS C

[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343

[3] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343

[4] SURFACE X-RAY ABSORPTION-SPECTROSCOPY - SURFACE EXAFS AND SURFACE XANES [J].

BIANCONI, A .

APPLIED SURFACE SCIENCE, 1980, 6 (3-4) :392-418

[5] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

STOFFEL, NG ;

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841

[6] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[7]

DRAHTEN P, 1978, SURF SCI, V77, pL162

[8] AL-REACTIONS WITH GAAS (100) SURFACES [J].

LANDGREN, G ;

LUDEKE, R .

SOLID STATE COMMUNICATIONS, 1981, 37 (02) :127-131

[9] INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES [J].

LUDEKE, R ;

LANDGREN, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :667-673

[10]

LUDEKE R, 1980, 8TH P INT VAC C CANN, P579

← 1 2 3 →